Platform — Module 1
Optical wafer inspection at production line speed
120 wafers per hour. 200mm and 300mm diameter support. Brightfield, darkfield, and edge exclusion scan modes. Inline wafer map output at lot close.
Specifications
Inspection system specifications
| Parameter | Value | Notes |
|---|---|---|
| Wafer diameters | 200mm, 300mm | Automatic cassette detection |
| Throughput (300mm) | 120 wph | Brightfield full-surface mode |
| Throughput (200mm) | 140 wph | Brightfield full-surface mode |
| Minimum defect size | 45nm | At 3nm process node illumination |
| False positive rate | <0.1% | Production conditions, 28nm–3nm |
| Scan modes | 3 | Brightfield / Darkfield / Edge exclusion |
| Process nodes | 28nm – 3nm | 6 nodes validated; 2nm on roadmap |
| Illumination | 365nm + 193nm | i-line + ArF excimer lamp |
| Output format | KLARF + SECS/GEM | GEM 300 / E40-compliant lot record |
| On-premises deployment | Required | No cloud dependency; air-gap compatible |
| EMI standard | IEC 61000-6-2 | Industrial immunity |
| Operating environment | ISO 3–5 | Cleanroom class |
Output
Inline wafer map at lot close
Every lot produces a die-level wafer map with defect markers, confidence scores, and classification codes — surfaced to MES in real time.
Wafer map output fields
| Lot ID | LOT-2026-041 |
| Wafer number | 07 / 25 |
| Diameter | 300mm |
| Scan mode | BF+DF combo |
| Total die count | 412 |
| Defect die count | 19 (4.6%) |
| Critical die count | 3 (0.7%) |
| Pass with review | 2 |
| Scan duration | 28.4 sec |
| Classifier confidence | avg 94.7% |
| Output format | KLARF + E40 |
Defect taxonomy breakdown
Scan Modes
Three scan modes for every inspection need
Brightfield (BF)
Full-surface illumination. Optimized for particle contamination and pattern defect detection. 120 wph on 300mm. Primary mode for logic foundry QA.
Darkfield (DF)
Oblique illumination at 22° incidence. Detects sub-wavelength particles and surface roughness anomalies not visible in brightfield. Optimized for epitaxial layer inspection.
Edge Exclusion
Focused scan of the 3mm edge exclusion zone. Critical for compound semiconductor substrates where edge-originated defect clusters propagate inward during processing.
Run the numbers on your wafer lot.
We run the evaluation on your actual production wafers — not synthetic benchmark data. Results include full wafer maps, classification breakdown, and false positive count for your specific process node.